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APT50M65JLL
500V 58A 0.065
POWER MOS 7
(R)
R
MOSFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT50M65JLL UNIT Volts Amps
500 58 232 30 40 520 4.16 -55 to 150 300 58 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.065 100 500 100 3 5
(VGS = 10V, 29A)
Ohms A nA Volts
12-2003 050-7019 Rev D
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50M65JLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 67A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 67A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 67A, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 333V, VGS = 15V ID = 67A, RG = 3
MIN
TYP
MAX
UNIT
7010 1390 87 141 40 70 12 28 29 30 1035 845 1556 1013 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr
rr dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
58 232 1.3 680 17.0 8
(Body Diode) (VGS = 0V, IS = -67A)
Reverse Recovery Time (IS = -67A, dl S /dt = 100A/s) Reverse Recovery Charge (IS = -67A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
Q
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.24 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 1.78mH, RG = 25, Peak IL = 58A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -58A di/dt 700A/s VR 500V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
, THERMAL IMPEDANCE (C/W)
0.9 0.20 0.7 0.15 0.5 Note:
PDM
12-2003
0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
t1 t2
050-7019 Rev D
JC
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
180
RC MODEL Junction temp. ( "C) 0.0528 0.0203F
APT50M65JLL
15 &10V
ID, DRAIN CURRENT (AMPERES)
160 140 120
8V
7V 100 80 60 6V 40 20 0 5.5V 5V 6.5V
Power (Watts)
0.0651
0.173F
0.123 Case temperature
0.490F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 180
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
NORMALIZED TO V = 10V @ 29A
GS
160 140 120 100 80 60 40 20 0
1.3
1.2 1.1 VGS=10V 1.00 VGS=20V 0.90 0.80
TJ = +125C TJ = +25C TJ = -55C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
10 20 30 40 50 60 70 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
60
ID, DRAIN CURRENT (AMPERES)
1.15 1.10
50
40 30
1.05
1.00
20 10 0
0.95
0.90 0.85 -50
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.5
I V
D
= 29A = 10V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
2.0
1.1 1.0 0.9 0.8 0.7
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6 -50
050-7019 Rev D
12-2003
232
ID, DRAIN CURRENT (AMPERES)
30,000
OPERATION HERE LIMITED BY RDS (ON)
APT50M65JLL
Ciss
100
10,000 100S
C, CAPACITANCE (pF)
1,000
Coss
10 1mS
100
Crss
TC =+25C TJ =+150C SINGLE PULSE 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 1
10mS
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
I
D
200 100
= 67A
12
VDS=100V VDS=250V
TJ =+150C TJ =+25C 10
8
VDS=400V
4
40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 80 70 60
td(on) and td(off) (ns)
V R = 3
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 160
V
DD G
= 333V
td(off)
140 120
R
= 3
T = 125C
J
L = 100H
tf
G
40 30 20 10 0 10
T = 125C
J
tr and tf (ns)
50
DD
= 333V
100 80 60 40 20 tr
L = 100H
td(on)
30
50
70
90
110
ID (A) FIGURE 14, DELAY TIMES vs CURRENT 3000 2500
SWITCHING ENERGY (J)
V
DD G
70 90 110 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5000
V I
DD
0 10
30
50
= 333V
= 333V
R
= 3
D J
= 67A
T = 125C
J
Eoff
SWITCHING ENERGY (J)
L = 100H
Eon
4000
T = 125C L = 100H E ON includes diode reverse recovery.
2000 1500
EON includes diode reverse recovery.
3000
2000
12-2003
1000 500 Eoff 0 10
Eon
1000
050-7019 Rev D
0 30 50 70 90 110 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5
ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
Typical Performance Curves
90% 10 %
Gate Voltage
APT50M65JLL
Gate Voltage
TJ = 125 C td(on) tr
Drain Current
T = 125 C J
td(off)
Drain Voltage
90% 90%
5% 10 %
Switching Energy Drain Voltage Switching Energy
10% tf 0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7019 Rev D
12-2003
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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